Switch with current potential control

ABSTRACT

A switch comprises voltage applying means for providing direct current potentials to first to third beams arranged with a spacing slightly distant one from another, and electrodes for inputting/outputting signals to/from the beams. By controlling the direct current potential provided to the beam, an electrostatic force is caused to thereby change the beam positions and change a capacitance between the beams. By causing an electrostatic force between the first and second beams and moving the both beams, the first and second beams can be electrically coupled together at high speed. Also, an electrostatic force is caused on the third beam arranged facing to the first and second beams, to previously place it close to the first and second beams. When the electrostatic force is released from between the first and second beams, the second beam moves toward the third beam thereby releasing the first and second beams of an electric coupling.

FIELD OF THE INVENTION

This invention relates to a switch, for use on an electric circuit,having an electrode to be mechanically moved by an externally appliedforce, to thereby pass or cut off the signal.

BACKGROUND OF THE INVENTION

Conventionally there is known, as a switch for use on an electriccircuit, a switch using an air bridge described in U.S. Pat. No.6,218,911. In this structure, a movable air bridge is arranged between apair of electrodes formed on a substrate. In case an electrostatic forceis given between the electrode and the movable air bridge, the airbridge horizontally moves toward the electrode into a contact with oneelectrode but isolated from the other electrode. Accordingly, in case asignal is inputted to the air bridge, the air bridge is electricallyconnected with the one electrode, allowing a signal to pass. However,the signal is cut off at the other electrode, thus enabling switchoperation.

Meanwhile, a micro-electromechanical RF switch is known which isdescribed in U.S. Pat. No. 6,307,452. The micro-electromechanical RFswitch has a plurality of folded spring suspension devices on asubstrate, on which a micro-platform is suspended. Beneath themicro-platform, a signal line is formed. When a direct current potentialis applied between the signal line and the micro-platform, anelectrostatic force is caused to attract the micro-platform toward thesignal line, thus effecting switch-on.

However, in the structure of U.S. Pat. No. 6,218,911, in the case ofdriving the air bridge on an electrostatic force, realizing greatersignal isolation requires to increase the spacing between the electrodeand the air bridge. However, because electrostatic force is proportionalto a negative square of distance, electrostatic force decreases andmakes it impossible for response time to attain a desired value.Meanwhile, there is an approach to increase the application voltage inorder to compensate for the decrease of electrostatic force. However,application voltage increase is not preferred for the radiocommunication device requiring low power consumption and low drivevoltage.

Meanwhile, because the air bridge is of a straight-beam structure,tensile stress if exists within the beam increases the rigidity againstelectrostatic force just like a strongly stretched cord, raising apull-in voltage (pull-in voltage due to electrostatic force).Furthermore, at an elevated temperature, beam internal stress turns intocompression, possibly causing buckling. Namely, unless the residualstress resulting from a manufacture process or environmental temperatureupon switch operation can be controlled constant, stable switchoperation characteristic cannot be guaranteed.

On the other hand, the micro-platform structure in U.S. Pat. No.6,307,452 is divided with a region for coupling to a signal line and afolded spring-suspension structure part (flexure) for relaxing stress.Namely, an additional structure is provided to relax internal stress. Asapparent from Newton's laws of motion, in the case of applying the sameforce to a structure having a mass m, the acceleration occurring on thestructure is greater as the mass m is smaller. For this reason, theabove structure involves the problem that, because of addition of theflexure, the mass m is increased to make it impossible to increase theresponse speed. Meanwhile, as the flexure is softer, the platform isrelaxed in binding at its supports. Consequently, in case there exists astress gradient in a direction of film thickness, the platform warps updue to stress release and separates off the substrate. Unless the stressgradient value cannot be accurately reproduced in the beam manufactureprocess, the degree of warpage varies, making it impossible to suppressthe variation in capacitance reduction between a platform and a signalline and the variation in pull-in voltage increase. Meanwhile, themanufacture with using a semiconductor process makes a beam and aflexure structure into the same material of conductors. In a radiofrequency circuit, the flexure part thereof has an non-negligibleimpedance.

Meanwhile, where the environmental temperature changes, thermal stresstakes place due to a difference of thermal expansion coefficient betweenthe base material and the beam material. Although the thermal stress isdifferent in occurrence cause from the foregoing residual stressencountered in manufacture process, it triggers a phenomenon of thesimilar “strain in the beam due to stress release”. Accordingly, it mustbe taken into account of an effect upon capacitance or pull-in voltage.

SUMMARY OF THE INVENTION

The present invention has been made in view of the foregoing points, andit is an object thereof to provide a switch capable of realizing toshorten response time and reduce application voltage.

Also, another object is to provide a switch capable of realizing aswitch free of a variation in pull-in voltage increase.

Also, another object is to provide a switch capable of suppressing thechange of switch characteristic due to a beam internal stress change.

A switch of the present invention is structured by first, second andthird beams arranged with spacing slightly distant one from another,voltage applying means for independently providing the beams with directcurrent potentials to apply an electrostatic force to the beam, andelectrodes provided on the beams and to input/output an alternatingcurrent signal to/from the beam whereby the beams are changed inposition by the electrostatic force and changed in the capacitancebetween the beams.

According to this structure, an electrostatic force is caused betweenthe first and second beams to thereby move both of the first and secondbeams so that the beams can be coupled together at high speed and putoff at high speed. By causing an electrostatic force on the third beamarranged facing to the second beam and previously placing it close tothe first and second beams, a strong electrostatic force can be appliedbetween the second and third beams, enabling to make a response athigher speed.

Also, in the invention, by providing the beams with the same form ofbending, it is possible to relax a pull-in voltage change against a beaminternal stress change and also a beam-to-beam capacitance change due tobeam strain.

This makes it possible to structure a ultra-small-sized variablecapacitive switch which is to be driven at high speed on low voltage andreduced in the characteristic change due to residual stress or thermalexpansion, by the use of a semiconductor thin-film process.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing a schematic structure of a switchaccording to embodiment 1 of the present invention;

FIG. 2A is a switch connection circuit diagram according to embodiment 1of the invention while FIG. 2B is an equivalent circuit diagram of thesame switch;

FIGS. 3A–3F are a concept view explaining the operation of the switch ofembodiment 1 of the invention;

FIGS. 4A–4F are a sectional view showing one example of a process tomanufacture a switch of embodiment 1 of the invention;

FIG. 5 is an essential-part sectional view of a switch according toembodiment 2 of the invention;

FIG. 6 is an equivalent circuit diagram of a switch according toembodiment 3 of the invention;

FIG. 7 is a plan view showing a schematic structure of a switchaccording to embodiment 3 of the invention;

FIG. 8A is a perspective view showing a schematic structure of a switchaccording to embodiment 4 of the invention while FIG. 8B is a plan viewof the same switch;

FIG. 9 is a characteristic diagram showing a relationship between a beaminternal stress and a pull-in voltage of a switch according toembodiment 4 of the invention;

FIG. 10 is a characteristic diagram showing a relationship between abeam internal stress and a beam-to-beam capacitance of the switchaccording to embodiment 4 of the invention;

FIG. 11 is a sectional view explaining one example of a manufacturingmethod for a switch of embodiment 4 of the invention;

FIG. 12 is a characteristic diagram showing a relationship between abeam internal stress and a beam primary resonant frequency of the switchaccording to embodiment 4 of the invention;

FIGS. 13A and 13B are a concept view explaining a structure andoperation of a switch according to embodiment 5 of the invention;

FIG. 14 is a characteristic diagram showing a relationship between amovable material application voltage and an internal stress of theswitch according to embodiment 5 of the invention; and

FIG. 15 is a concept view explaining a control method for a switchaccording to embodiment 5 of the invention.

DESCRIPTION OF THE EXEMPLARY EMBODIMENT

Exemplary embodiments of the present invention are demonstratedhereinafter with reference to the accompanying drawings.

The present invention has a gist to realize, in a switch having threebeams to be changed in relative positions so that the capacitance can bechanged between the beams, to provide electric coupling and decoupling,a structure that high-speed switching and low direct-current control ismade possible by making the beams all movable.

Meanwhile, the present structure aims at relaxing the pull-in voltagechange against a beam internal stress, to relax also the beam-to-beamcapacitance change resulting from beam strain, by constructing the beamsforming the switch by a flexure structure.

1. First Exemplary Embodiment

With reference to FIGS. 1 to 3, explained is embodiment 1 of theinvention. FIG. 1 depicts a schematic structural view of a switchaccording to embodiment 1. A first beam 1, second beam 2, third beam 3is formed of such a shape and material as transferring an electricsignal with no loss, having an insulation film with approximately 10 nmon a surface thereof. The beam 1, 2, 3 is formed, for example, of ametal, such as Al, Au, Cu or an alloy, having a shape in aboth-ends-supported beam structure having a thickness 2 μm, a width 2 μmand a length 200 μm and supported at both ends. These are arrangedparallel at such a spacing, e.g. of 0.6 μm, to satisfy a givenisolation. The beam 1, 2, 3 is not necessarily a both-ends-supportedbeam structure but may be a cantilever form. Meanwhile, the beam 1, 2, 3has a beam spring constant to be varied by changing the shape.Incidentally, the beam 1, 2, 3 is based on a structure and process toreduce its internal stress to a possible less extent, the detail ofwhich will be referred later. The beam 1 has both ends connected withelectrodes 4, 7, the beam 2 with electrodes 5, 8, and the beam 3 withelectrodes 6, 9.

In order for easy explaining, explanation is made on an example that theelectrode 5 is taken as an input terminal to be applied by an inputsignal, the electrode 7 is taken as an output terminal connected to anantenna end, and the electrode 9 is terminated at 50 Ω. FIG. 2A shows aconnection circuit while FIG. 2B shows an equivalent circuit thereof.

In following explanation, “switched on” means a state of placing theelectrode 5 and the electrode 7 into contact in FIG. 2A, and “switchedoff” means a state of isolating the electrode 5 and the electrode 7 andplacing the electrode 5 and the electrode 9 into contact. According tothe circuits shown in FIGS. 2A and 2B, no reflected wave is generatedwhen switched off, because the circuits are terminated at 50 Ω. Inaddition, the impedance of the capacity c₁ becomes large and theimpedance of the capacity c₂ becomes small when switched off, so thatthe signal from the input terminal is grounded through the capacity C₂and the 50 Ω resistor. As a result, the isolation becomes large betweenthe electrode 7 and the electrode 5. In this case, it is preferable toinsert capacitors between the input signal source and input terminalelectrode 5, and antenna and output terminal electrode 7. The 50 Ωresistor may be omittable for enhancing isolation between the electrode7 and the electrode 5.

In this configuration, no reflection wavestake place as viewed from theinput terminal. Furthermore, when the switch is OFF, isolation is to betaken great at between the electrode 7, as an antenna end, and theelectrode 5, as an input terminal. In this case, capacitances may bedisposed at between the electrode 5, as an input signal source and theinput terminal, or input terminal, and between the electrode 7, oroutput terminal, and the antenna end, as required.

Incidentally, connecting the electrode 9 to another output terminalinstead of termination, it is possible to realize a distribution switchhaving 1 input and 2 outputs. Otherwise, in case the electrode 5 istaken as an output terminal and the electrodes 7 and 9 as inputterminals from the antenna, a selector switch can be made having 1output versus 2 antenna inputs.

Now, switch operation is explained with using FIGS. 3A to 3F. FIG. 3Ashows a state that no voltages are applied to the electrodes 4–9 of theFIG. 1 switch. In order to couple a signal from the input terminal tothe antenna end, in FIG. 3B, the direct current potential by a controlvoltage source 10 connected to the electrode 4 is set at a predeterminedresponse time High. Similarly, the direct current potential of a controlvoltage source 11 connected to the terminal 5 and the direct currentpotential by a control voltage source 12 connected to the terminal 6 areset at a predetermined response time Low. Due to this, an electrostaticforce is caused between the beam 1 and the beam 2. The beam 1 and thebeam 2 are attracted into contact with each other.

At this time, in case the beam 1 and the beam 2 are in the same formwith a same spring constant and mass, the beam 1 and the beam 2 areplaced in contact at a halfway point. In this case, as compared to thecase that either one of the beams 1, 2 is provided as a fixed electrode,because the distance change amount between the beams 1, 2 under the sameelectromagnetic force is twice the amount. Response is possible athigher speed. With the same response time, control is possible at lowervoltage. For example, in case the electrode 4 is given a direct currentpotential 7.25 V, response time can be 5 μS or less. However, in thecase it is movable only at one end, response time is 7.4 μS, i.e. aresponse time is longer approximately 1.5 times. In this case, in orderto reduce a response time down to 5 μS, application voltage must be at10.3 V.

When the beam 1 and the beam 2 come into contact, the alternatingcurrent signal inputted at the electrode 5, or input terminal, istransferred from the beam 2 to the beam 1 by a capacitive couplingthrough the insulation film provided on the surface of the beam 1, 2,thus being outputted onto the electrode 7, or output terminal.

In the state of FIG. 3B, in case the direct current potential by thecontrol voltage source 12 connected to the electrode 6 of the beam 3 isrendered High, an electrostatic force occurs at between the beam 3 andthe beam 2. Thus, the beam 3 moves in a direction toward the beam 2, asshown in FIG. 3C. At this time, the beams 1, 2 also move in a directiontoward the beam 3. However, because the beams 1, 2, coupled two in thenumber, they are great in equivalent spring constant, moving amount issmall as compared to that of the beam 3. However, it is noted that thedirect current potential to be applied to the electrode 6 is at avoltage not to pull-in the beam 3 or smaller. Under the foregoingcondition, the pull-in voltage is approximately 6.7 V. If a voltage lessthan that is applied, the beam 3 has a maximum displacing amount ofnearly 0.15 μm, and the beams 2, 3 have a maximum gap of 0.75 μm.Because electrostatic force is inversely proportional to a square ofdistance, the electrostatic force caused between the beams 3 and 2 is1.4 times as great as that of the case the beam 3 is not moved.

Incidentally, instead of applying a direct current potential to theelectrode 6 in the state of FIG. 3B, the direct current potentials onthe electrodes 4 and 5 may be instantaneously reversed to each other. Bydoing so, an electrostatic force can be caused between the beams 2 and 3without newly applying a direct current potential by the control voltagesource 12. In this case, there is no possibility of causing pull-inbecause of a great gap at between beams 2 and 3.

Meanwhile, in a situation isolation is required high, in case the directcurrent potential by the control voltage source 12 is kept in the Lowstate, the beam 3 is not to move. This can maintain the state the gapbetween the beams 2, 3 is kept great, making it possible to decrease theelectric coupling between the beams 2 and 3.

Now, explained is the operation the input signal is switched andoutputted, as antenna end, from the electrode 7 to the electrode 9. Inthe state of FIG. 3C, the direct current potential being applied to theelectrode 4 is turned from High to Low, an electrostatic force does notoccur at between the beams 1 and 2. Consequently, the beam 1 and beam 2is returned to its former position by its own spring force, as shown inFIG. 3D. At this time, because the beam 3 is previously deformed towardthe beam 2, the beam 2 is strongly, rapidly moved toward the beam 3 byan electrostatic force caused between the beams 2, 3 and placed intocontact with the beam 3, as shown in FIG. 3E. In the case the beam 3 isnot previously deflected toward the beam 2, the maximum gap is 0.9 μm.This requires a higher voltage to be applied in shortening the responsetime.

When the beam 2 and the beam 3 come into contact, the alternatingcurrent signal inputted at the electrode 5 is transferred from the beam2 to the beam 3 by a capacitive coupling through the insulation filmformed on the surface of the beams 2 and 3, thus being outputted ontothe electrode 9. By connecting the beams 2 and 3 when switched off, C2is short-circuited and c1 becomes hard to transmit signals in FIG. 2B,so that higher isolation is obtained between the electrode 7 and theelectrode 5.

When the beam 3 is not bended previously towards the beam 2, maximum gapbetween the beams 2 and 3 becomes about 0.9 μm, it is necessary tosupply high control voltage to the beam 2 for operating the switchwithin desired short response time.

Incidentally, in the state of FIG. 3E, a direct current potential isfurther applied to the electrode 4 similarly to the case of FIG. 3C tothereby apply an electrostatic force at between the beams 1 and 2, thebeam 1 deflects toward the beam 2 as in FIG. 3F, enabling to reduce themaximum gap.

By the switch operation as above, the beam 2 applied by a signal in ONand OFF states is always in contact with the other beam 1 or 3, i.e. ina latched state. Due to this, should a great power signal be inputted tothe beam 2, the beam 2 unless being latched is possibly attracted due toan electrostatic force of the signal itself by the beam 1 or 3. However,because of always latched by the beam 1 or 3, the beam 2 can beprevented from malfunctioning.

Although the above explained the case that the beams 1, 2, 3 are to movehorizontally due to an electrostatic force, the beams 1, 2, 3 may bearranged in a vertical direction and to be moved vertically. Meanwhile,electrostatic force is used in a driving force, electromagnetic force,piezoelectricity or heat may be used instead. Besides in air, the beams1, 2, 3 may be operated in vacuum or in an inert gas.

Now, explained is one process example to manufacture a switch of FIG. 1,with using a process sectional view of FIG. 4. In FIG. 4A, when a highresistive silicon substrate 41 is thermally oxidized, a silicon oxidefilm 42 is formed in a thickness of approximately 300 nm on thesubstrate 41. A silicon nitride film 43 is deposited over that with afilm thickness of 200 nm, by a lowpressure CVD process. Furthermore, asilicon oxide film 44 is deposited on that with a film thickness of 50nm, by a low pressure CVD process.

Then, in FIG. 4B, a sacrificial layer of photoresist is spin-coated witha film thickness of 2 μm over the silicon oxide film 44. After exposureto light and development, baking is carried out on a hot plate at 140°C. for 10 minutes, thereby forming a sacrificial layer 45.

Thereafter, as shown in FIG. 4C, an Al layer 46 is deposited with a filmthickness of 2 μm over the entire substrate surface, by sputtering.Thus, a photoresist pattern 47 is formed leaving the resist in apredetermined area.

Next, as shown in FIG. 4D, the photoresist pattern 47 is used as a mask,to carry out dry etching on the Al layer 46 thereby forming a beam 48.Furthermore, an oxide plasma process is carried out to remove thephotoresist pattern 47 and sacrificial layer 45. By the above process,formed is the beam 48 having a gap 49 to a surface of the substrate 41.

Furthermore, as shown in FIG. 4E, a silicon nitride film 50 is depositedwith a film thickness of 50 nm on the entire surface of beam 48 and overthe silicon oxide film 44 on the substrate surface, by a plasma CVD.Thereupon, a silicon nitride film 50 is formed over the silicon oxidefilm 44 on the substrate surface and on the periphery of the beam 48.

Finally, as shown in FIG. 4F, etching back is made on the siliconnitride film 43 by a dry etching process having anisotropy, under thecondition of a selective ratio of a film thickness greater than theforegoing deposition film thickness, e.g. 100 nm, to the silicon oxidefilm 44. Etching is made not to have the silicon nitride film 50 on anupper surface but leave the silicon nitride film 50 at only a sidesurface, thus forming a beam 51.

Incidentally, although this embodiment used the high resistive siliconsubstrate 41, a usual silicon substrate, compound semiconductorsubstrate or insulation-material substrate may be used alternatively.

Also, although a silicon oxide film 42, a silicon nitride film 43 and asilicon oxide film 44 were formed as insulation films on the highresistive silicon substrate 41, these insulation films may be omittedlyformed where substrate resistance is sufficiently high. Meanwhile, onthe silicon substrate was formed an insulation film in a three-layeredstructure having a silicon oxide film 42, a silicon nitride film 43 anda silicon oxide film 44. However, in the case the silicon nitride film43 has a film thickness sufficiently greater as compared to a siliconnitride film deposited on the beam, i.e. a film thickness not to vanisheven through so-called an etch-back process, it is possible to omit theforming process for a silicon oxide film 44.

Incidentally, this embodiment used Al as a material for forming thebeam. Alternatively used may be another metal material, e.g. Mo. Ti, Auor Cu, a semiconductor material such as amorphous silicon introducedwith an impurity with concentration, or a polymer material havingconductivity. Furthermore, although sputtering was used as a filmforming process, forming may be by using a CVD technique, a platingtechnique or the like.

2. Second Exemplary Embodiment

Now a second embodiment is explained while referring to FIG. 5. Thisembodiment is basically the same in structure as the first embodiment.However, a second beam 32 is formed smaller in thickness as compared tothe first beam 31 and third beam 33, e.g. the first and third beams areformed 1.5 times greater in thickness than the second beam. In thisembodiment, when the first beam 31 and the second beam 32 come intocontact, an electrostatic force 35 acts between the first beam 31 andthe third beam 33 in addition to an electrostatic force 34 actingbetween the first beam 31 and the second beam 32. With this structure,even unless a direct current potential is newly applied to the electrode6 after a contact between the first beam 31 and the second beam 32 aswas in the first embodiment, the third beam 33 is to move toward thesecond beam 32.

In such a case, in order for the first beam 31 to near toward the thirdbeam 33 to a possible close extent, the second beam 32 may have anincreased spring constant so that the first beam 31 and the second beam32 can go into contact not at a halfway point but a point closer to thesecond beam 32.

3. Third Exemplary Embodiment

Now a third embodiment is explained while referring to FIGS. 6 and 7.This embodiment has a plurality (four in FIG. 6) of FIG. 2A switchcircuits symmetrically about an antenna end 65, as shown in FIG. 6. Thiscan realize a one-input multi-output switch that can distribute an inputto one antenna into a plurality of outputs and multi-output them. Theswitch thus structured can be configured by arraying the switches usedin embodiment 1 and capacitively coupling those as shown in FIG. 7.Incidentally, FIG. 7 shows a case having two switch circuits. In FIG. 7,an electrode 71 is formed with a plurality of beams 74 in a comb form,having beams 75 between the beams 74. The beams 75 are respectivelycoupled with electrodes 72. An electrode 73 is provided oppositely tothe electrodes 72. The electrode 71 is connected with a control voltagesource 76, the electrode 72 with a control voltage source 77 and theelectrode 73 is with control voltage source 78, respectively.

In case the direct current potential by the control voltage source 76connected to the electrode 71 is provided High while the direct currentpotential by the control voltage source 77 connected to the electrode 72and the direct current potential by the control voltage source 78connected to the electrode 73 are provided Low, then a capacitivecoupling 79 occurs at between the beam 74 and the beam 75 therebyeffecting switch operation.

In the case a quick response time is required on the embodiment 1switch, the moving beam must be small in mass. However, for theembodiment 3 switch for capacitive coupling, reducing a beam massresults in a reduction in the sectional area of capacitive coupling, todecrease a coupling degree and increase a passing loss. For this reason,in order to compatibly provide two reciprocal characteristics, i.e.response time and passing loss, the individual beams are made small toreduce the response time. By arraying such beams, the coupling degree isincreased on the switch overall thereby satisfying the twocharacteristics of response time and passing loss. For example, providedthat the individual beam is given a form having a width 2.5 μm by athickness 2.5 μm by a length 380 μm, 5 sets of switches in parallelarrangement provides a preferred passing characteristic at analternating current signal frequency of 5 GHz.

This embodiment has a frequency characteristic because of capacitivecoupling. Provided that the switch capacitance on a series-connectionside shown in the equivalent circuit of FIG. 2B is C₁ and thecapacitance on a grounding side is C₂, impedance Z is to be expressed asEquation 1. C₁ and C₂ use the switch having basically the sameconfiguration. The relationship between C₁ and C₂ is expressed asEquation 2. α represents a change ratio of capacitance, which is a ratioof a beam-to-beam gap and an insulation film thickness as it is.$\begin{matrix}{Z = {\frac{\omega\; C_{1}}{1 - {\omega^{2}C_{1}C_{1}}}}} & {{EQ}\mspace{14mu} 1}\end{matrix}$C₂=α C₁  EQ 2In case α is taken great, drive voltage is increased to increaseresponse time. Accordingly, it cannot be taken so great. For example, inthe case an insulation film is 10 nm and a gap is 0.6 μm, α is given 60.

In order to secure isolation, the condition that impedance takes amaximum is shown by Equation 3. Provided that α is 60 and applicationfrequency is 5 GHz, C₁ is 4.2 pF. If this is replaced into a form ofbeam, it is satisfactory to use five sets of beams each having athickness 2.5 μm by a width 2.5 μm by a length 380 μm. $\begin{matrix}{C_{1} = \sqrt{\frac{1}{\alpha\;\omega^{2}}}} & {{EQ}\mspace{14mu} 3}\end{matrix}$

Meanwhile, when handling a signal having a frequency of 1 GHz, in casethe frequency is one-fifth and hence the number of application beams isgiven 5 times, i.e. 25 sets, a characteristic is obtained equivalent to5 GHz, thus enabling to realize a switch not having a frequencycharacteristic.

According to this embodiment, a switch having a desired impedance orcapacitance can be realized by arranging a plurality of switches inparallel.

4. Fourth Exemplary Embodiment

Now, embodiment 4 of the invention is explained while referring to FIGS.8 to 12. FIG. 8A is a perspective view of a switch concerned withembodiment 4 of the invention while FIG. 8B is a plan view thereof. Afirst beam 81, second beam 82 and third beam 83 is both-ends-supportedbeam whose both ends are fixed on a substrate (not shown) by anchorparts 84, 85. These are in a thickness t1=t2=t3=2 μm by a widthW1=W2=W3=2 μm by a length L=500 μm. The beam uses, as a material, Alhaving a Young's Modulus of 77 GPa. The beams 81, 82, 83 are arrangedparallel at an interval of g=0.6 μm. Insulation layers havingapproximately 0.01 μm are formed on the opposed side surfaces ofadjacent beams. This is sufficiently small as compared to the width ofbeam, having a less effect upon the mechanical characteristics of thebeam. Incidentally, the insulation film may be formed either one of orboth of the opposed side surfaces.

As shown in FIG. 8B, the beams 81, 82, 83 are curved in an S-form asviewed at the above of the switch. The S-form is expressed by one periodof a sinusoidal function of Equation 4, for example. $\begin{matrix}{y = {\Delta\; y\mspace{11mu}{\sin\left( {2\pi\frac{x}{L}} \right)}}} & {{EQ}\mspace{14mu} 4}\end{matrix}$

Note that, in FIG. 8B, flexure is depicted with exaggeration in orderfor easy understanding. On the beam, there exist an internal stress Sxin the x direction and internal stress Sy in the y direction evenlywithout relying upon x, y, z position. These are isotropic internalstresses, i.e. Sx=Sy=S. The beam, to be manufactured by using asemiconductor process, is formed on a sacrificial layer. In this case,although there exists an internal stress S, the stress S removed of thesacrificial layer takes a somewhat freed value.

In the structure of FIGS. 8A and 8B, when the first beam 81 and thesecond beam 82 are deflected by giving a potential difference to betweenthese, internal stress S and pull-in voltage have a relationship asshown in FIG. 9. Compared is the magnitude of flexure, i.e. the casesthe Δy value in Equation 4 is 2, 4 and 6 μm. Meanwhile, shown togetheris a case of a straight beam structure having Δy=0, i.e. having noflexure. However, because buckling occurs under the application of acompression stress, stress S is shown within a plus range, i.e. onlyvalues of upon tensile stress. In this manner, the increase of pull-involtage due to an increase of internal stress S can be suppressed bymerely giving a flexure. This provides a greater suppressing effect asthe magnitude of flexure, i.e. Δy value is increased.

Now, explained is the case of a flexure in an arch form, in order toverify the effect of S-form. The arch-formed flexure was approximated bya half period of a sinusoidal function of Equation 5. The relationshipof an internal stress S and a pull-in voltage at Δy=4 μm is togethershown in FIG. 9. $\begin{matrix}{y = {\Delta\; y\mspace{11mu}{\sin\left( {\pi\frac{x}{L}} \right)}}} & {{EQ}\mspace{14mu} 5}\end{matrix}$

Apparently, an arch form at S=0−30 MPa is greater in pull-in voltagethan an S-form having Δy=2 μm, wherein they soon go near in a region of30 MPa or greater. In a range of S=0−10 MPa, it has a greater pull-involtage rather than the straight beam. Nevertheless, because pull-involtage is nearly constant at around S=20±10 MPa, the variation inpull-in voltage can be reduced if the variation in residual stress canbe suppressed within that range.

Next, by providing the same flexure in the adjacent beams, it ispossible to suppress the capacitance change at between the adjacentbeams against a deformation of the beam due to internal stress. FIG. 10represents a relationship between an internal stress S and a capacitanceat a potential difference of 0V between the adjacent beams. In caseplotting is made on three S-forms (Δy=2 μm, Δy=4 μm, and Δy=6 μm)different in flexure degree and an arch-form (Δy=4 μm), it can be seenthat the four are overlapped one with another as the curve-w.Accordingly, capacitance is kept nearly constant both on the arch formand S-form without undergoing the effect of internal stress. Namely,even where the beam internal stress is changed by a variation inmanufacture process or by a thermal expansion due to a surroundingtemperature change, electric characteristic variation can be suppressedas a capacitive coupling type switch.

Incidentally, the beams 81, 82, 83 are of the same flexure form andhence the same mechanical springiness. In case a potential difference isgiven, for example, between the beams 81, 82, the both displace the sameamount into a contact at a half point in the gap between the both. Forexample, in order to near this contact point toward the beam 81, it issatisfactory to increase the rigidity of the beam 81. The first methodis to increase the width W of the beam 81. There is shown, in FIG. 10, acurve-x (plotting with*) on a change of abeam internal stress andcapacitance between the both beams when a potential difference betweenthe beams 81, 82 is V=0 in the case of taking W1=4 μm and W2=2 μm on theS-formed beams 81, 82 having Δy=2 μm. By thus thickening the beam 81,the way of deformation due to residual strain is different from that ofthe beam 82, resulting in a great capacitance change between the both.The extreme form, for enhancing the rigidity of beam 81, is to make thebeam 81 as a fixed electrode. However, in this case, the capacitancewill change furthermore due to an internal stress change.

There is, as another method for controlling the beams contact point, amethod of providing a thickness t1 of the beam 81 greater than athickness t2 of the beam 82, for example. There is shown, in FIG. 10, acurve-y (plotting with Δ) on a change of a beam internal stress andcapacitance between the both beams when the potential difference betweenthe beams 81, 82 is V=0 in the case of taking t1=4 μm and t2=2 μm.Unlike from the method to increase the width, thickness increaseapparently obtains an effect to keep capacitance nearly constant withoutundergoing the affection of internal stress.

FIG. 11 shows one example of a method for manufacturing a switchstructured as in the above. FIG. 11 is a sectional view along line A–A′in FIG. 8B, showing a state that an insulation film 91, sacrificiallayer 92 and photolithography-patterned resist 86 is formed on asubstrate 90, to form metal beams 81, 82, 83 between the patterned oneof photoresist 86 by electroplating. The seed layer 87 for a beam 81, 83is grounded. However, a seed layer 88 for a beam 82 is controlled by aswitch 89 such that it is grounded until a time T but is made equal toan anode potential V after the time T. The anode potential V is providedby an anode electrode 93. The use of such an electroplating processforms beams 81, 82, 83 as metal layers having the same height, beforethe time T. However, at time T and therafter, no plating is formed onthe beam 82. Thus, beams can be formed that are adjacent but differentin thickness.

In this manner, by merely providing a beam forming a variablecapacitance structure with a slight flexure, it is possible to suppressa characteristic change in pull-in voltage, capacitance or the like dueto residual stress or thermal expansion, as causing a problem in asmall-lined beam structure. Meanwhile, because the degree of flexure is,for example, approximately several μm for an electrode length L=500 μm,the resistance component of the beam itself is nearly the same as thatof a straight-lined beam. Also, there is no need to provide a flexurestructure besides the beam structure, and no prevention against deviceminiaturization. Furthermore, during a fabrication by a semiconductorthin-film process, flexure is determined by mask-rendering and henceeasy to form.

The switch using a flexure structure can be broadly diverted as variablecapacitive element to other devices. For example, in case the beam ismade as a mechanical resonator to use resonance of its lateral vibrationand beam surface treatment so that a certain kind of gas component canbe enhanced in absorbability to a beam surface, beam mass varies due togas adsorption, to vary resonant frequency. Accordingly, this can beutilized as a gas concentration sensor. In this case, if it should bestructured by a resonator of a straight both-end-supported beam andadjacent fixed electrode, when the beam internal stress is changed bythe variation in beam residual stress resulting from manufacture processor surrounding temperature change, problematically the resonantfrequency greatly changes. However, such resonant frequency can bemoderated by using adjacent movable beams having a flexure form as inembodiment 4.

Using a parameter representative of a flexure form of the beam shown inFIG. 9, FIG. 12 shows a relationship between an internal stress and aprimary resonant frequency. There is appeared a tendency similar to thefeature of the relationship between an internal stress and a pull-involtage of FIG. 9. By increasing the curvature degree of S-form (Δy),resonant frequency change can be suppressed.

Incidentally, the foregoing embodiments explained the cases using thefirst, second and third of three beams, four beams or more can becomprised to structure a switch wherein three beams are for makingoperations according to the embodiments.

5. Fifth Exemplary Embodiment

FIGS. 13A and 13B are side views showing a switch structure according toembodiment 5 of the invention. FIG. 13A is in a switch off state whileFIG. 13B is in a switch on state.

On a substrate 106, provided are a conductive pillar 108 connected to aninput terminal to input a signal and a conductive pillar 109 connectedto an output terminal to output a signal. A beam-structured movableelectrode 104 is suspended between the pillars 108, 109. A fixedelectrode 105 is arranged in an intermediate position between thepillars 108 and 109 on the substrate 106. By applying an electrostaticforce between the movable electrode 104 and the fixed electrode 105, themovable electrode 104 is moved toward the fixed electrode 105. Themovable electrode 104 is formed on a movable member 103. The movablemember 103 is structured by an ICPF (Ionic Conducting Polymer gel Film).The ICPF has an internal stress to vary depending upon an applicationvoltage, as shown in FIG. 14. By using this nature, the spring constantof the movable member 103 can be varied.

Now, switch operation is explained with reference to FIG. 15. In FIG.15, the upper shows a position of the movable electrode 104 while thelower shows a change of spring constant in time of the movable electrode104. The neutral position the electrode 104 is not applied by anelectrostatic force is assumably zero. When an electrostatic force iscaused between the movable electrode 104 and the electrode 105 tothereby attract the movable electrode 104 toward the electrode 105, acontrol voltage 107 is applied to the movable member 103 such that thespring constant of the movable member 103 assumes a minimum. At thistime, because the spring force is minimized, the movable member 103 andmovable electrode 104 is rapidly pulled in by an electrostatic forcewithout being interfered by the spring force.

Next, when the movable electrode 104 is detached from the electrode 105,such a voltage as maximizing the ICPF spring force is previously appliedto the movable member 103 by a control voltage 107, thus maximizing thespring force. By putting the electrostatic force off between the movableelectrode 104 and the fixed electrode 105, the movable member 103 andmovable electrode 104 rapidly returns to a predetermined position by thespring force.

Because polymeric gel generally has a response time of approximatelyseveral ms to a control signal, expanding/contracting a polymeric gelcannot be used as a drive force for a switch requiring high-speedresponse. There is a sufficient response time in changing the springforce of the movable member 103 into a state the switch is held. In thismanner, high-speed response is made feasible by making the spring forceof the movable member 103 to optimal values respectively upon pulling inand out.

The material used for the movable member 103 may be, besides ICPF, amaterial that the physical value is to vary depending upon externalcontrol, e.g. a polymeric gel or piezoelectric material for use inartificial muscle. Meanwhile, in case the movable member is formed of aconductive material, the movable electrode 104 and the electrode 105 canbe formed in one body.

As in the above, the switch of the invention has an effect that responsetime shortening and application voltage reduction can be realized bymaking three beams all movable. Furthermore, in case adaptivelyselecting the number of using beams to provide an optimal impedance inaccordance with an application frequency, there is an advantageouseffect to realize a switch having no frequency characteristic.Meanwhile, the flexure structure of beams can suppress against switchcharacteristic change due to internal stress change.

1. A switch comprising: first, second and third beams movable relativeto each other and arranged with constant spacing one from another,wherein the first, second and third beams are arranged horizontally, anyof the first, second and third beams are to move horizantally; andvoltage applying means for providing a direct current potential to thefirst, second and third beams and applying a driving force to move thefirst, second and third beams, respectively.
 2. A switch according toclaim 1, wherein, when turning on the switch, the voltage applying meansgenerates a drive force between the first beam and the second beamthereby placing the first beam and the second beam into a contact andelectric coupling while, when turning off the switch, a drive force iscaused between the second beam and the third beam thereby isolatingbetween the first beam and the second beam.
 3. A switch according toclaim 1, wherein the first, second and third beams are arranged with aspacing satisfying a predetermined isolation.
 4. A switch according toclaim 2, wherein the voltage applying means is to apply a direct currentpotential to the first, second and third beams for a predetermined time.5. A switch according to claim 2, wherein the third beam is moved afterelectric coupling between the first beam and the second beam.
 6. Aswitch according to claim 1, wherein the beam is changed in a springconstant by changing a shape of the beam.
 7. A switch according to claim1, wherein the second beam is made smaller in shape as compared to thefirst and third beams.
 8. A switch according to claim 2, wherein thesecond beam is made smaller in shape as compared to the first and thirdbeams, and, in a state the first and second beams are electricallycoupled together, the third beam is applied by a drive force from thefirst beam and the third beam is moved toward the first and secondbeams.
 9. A switch according to claim 2, wherein, when the first andsecond beams are electrically coupled together, the first beam and thesecond beam are switched in potential each other, to cause a drive forceon the third beam.
 10. A switch according to claim 2, wherein a driveforce is not caused on the third beam and the third beam is not moved.11. A switch according to claim 1, wherein the first beam is connectedto an antenna end, the second beam is connected to an input terminal andthe third beam is terminated at a predetermined resistance value.
 12. Aswitch according to claim 2, when turning off the switch, said secondbeam and the third beam are previously placed in contact.
 13. A switchcomprising a group of switches, said group of switches is formed byarranging a plurality of switches according to claim 1 in parallel. 14.A switch according to claim 1, wherein any of the first, second andthird beams is formed of a metal.
 15. A switch according to claim 1,wherein the first, second and third beams are arranged vertically, anyof the first, second and third beams are to move vertically.
 16. Aswitch according to claim 11, wherein capacitances are arranged betweenthe first beam and the antenna end and between the second beam and theinput terminal.
 17. A switch according to claim 1, wherein the switch isto be operated in a vacuum or in an inert gas.
 18. A switch according toclaim 13, wherein said group of switches is formed by arranging aplurality of switches in the number symmetrically about the antenna end.19. A switch according to claim 1, wherein adjacent two or three of thefirst, second and third beams are bent in a same shape.
 20. A switchaccording to claim 19, wherein any of the first, second and third beamsis made in an S-form.
 21. A switch according to claim 19, wherein any ofthe first, second and third beams is different in thickness from anadjacent one thereof.
 22. A switch according to claim 1, wherein thedrive force is an electrostatic force.
 23. A switch according to claim1, wherein the switch is formed by a semiconductor process.